1

Growth of PbSe0.78Te0.22 lattice-matched with BaF2

Year:
1993
Language:
english
File:
PDF, 931 KB
english, 1993
9

Growth of thin In0.53Ga0.47As layers by liquid phase epitaxy

Year:
1987
Language:
english
File:
PDF, 277 KB
english, 1987
10

Liquid phase epitaxial growth of PbSe on (111) and (100) BaF2

Year:
1991
Language:
english
File:
PDF, 718 KB
english, 1991
16

Liquid phase epitaxy of pbtese lattice-matched to pbsnte

Year:
1981
Language:
english
File:
PDF, 785 KB
english, 1981
31

Rapid thermal annealing of Be+-implanted In0.52Al0.48As

Year:
1987
Language:
english
File:
PDF, 989 KB
english, 1987
36

O+ implantation and annealing in n-type InAlAs

Year:
1987
Language:
english
File:
PDF, 500 KB
english, 1987
37

Complete strain relief of heteroepitaxial GaAs on silicon

Year:
1992
Language:
english
File:
PDF, 597 KB
english, 1992
43

Manganese as a p-type dopant for liquid-phase-epitaxial In0.53Ga0.47As

Year:
1985
Language:
english
File:
PDF, 658 KB
english, 1985
47

Spatial confinement effects on type II quantum well intersubband transitions

Year:
1995
Language:
english
File:
PDF, 295 KB
english, 1995
48

Analysis of rib waveguides with sloped rib sides

Year:
1985
Language:
english
File:
PDF, 439 KB
english, 1985